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Vishay

SI7139DP-T1-GE3

This order may require lead time

Vishay

SI7139DP-T1-GE3

MOSFET P-CH 30V 40A PPAK SO-8
Specifications
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.5V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 4230 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 15A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V
Current 40A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package PowerPAK® SO-8
Power Dissipation (Max) 5W (Ta), 48W (Tc)

Talk to a Human: (608) 338-0082