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Vishay

SI7898DP-T1-GE3

Total in Stock: 1673 parts

Vishay

SI7898DP-T1-GE3

MOSFET N-CH 150V 3A PPAK SO-8
Specifications
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 4V @ 250µA
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.5A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Current 3A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 150 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package PowerPAK® SO-8
Power Dissipation (Max) 1.9W (Ta)

Talk to a Human: (608) 338-0082