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Vishay

SIR610DP-T1-RE3

This order may require lead time

Vishay

SIR610DP-T1-RE3

MOSFET N-CH 200V 35.4A PPAK SO-8
Specifications
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 4V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 31.9mOhm @ 10A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Current 35.4A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 200 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package PowerPAK® SO-8
Power Dissipation (Max) 104W (Tc)

Talk to a Human: (608) 338-0082