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Vishay

SIR681DP-T1-RE3

This order may require lead time

Vishay

SIR681DP-T1-RE3

MOSFET P-CH 80V 17.6A/71.9A PPAK
Specifications
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.6V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 40 V
Rds On (Max) @ Id, Vgs 11.2mOhm @ 10A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Current 17.6A (Ta), 71.9A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 80 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package PowerPAK® SO-8
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)

Talk to a Human: (608) 338-0082