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STMicroelectronics

STB20N65M5

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STMicroelectronics

STB20N65M5

MOSFET N-CH 650V 18A D2PAK
Specifications
Supplier Device Package D²PAK (TO-263)
Vgs(th) (Max) @ Id 5V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1434 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Current 18A (Tc)
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 650 V
Mounting Type Surface Mount
Vgs (Max) ±25V
Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 130W (Tc)

Talk to a Human: (608) 338-0082