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TOSHIBA

TK33S10N1L,LQ

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TOSHIBA

TK33S10N1L,LQ

MOSFET N-CH 100V 33A DPAK
Specifications
Supplier Device Package DPAK+
Vgs(th) (Max) @ Id 2.5V @ 500µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 16.5A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Current 33A (Ta)
Operating Temperature 175°C
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) 125W (Tc)

Talk to a Human: (608) 338-0082