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TOSHIBA

TPN4R712MD,L1Q

Total in Stock: 2452 parts

TOSHIBA

TPN4R712MD,L1Q

MOSFET P-CH 20V 36A 8TSON
Specifications
Supplier Device Package 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id 1.2V @ 1mA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
Current 36A (Tc)
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 20 V
Mounting Type Surface Mount
Vgs (Max) ±12V
Package 8-PowerVDFN
Power Dissipation (Max) 42W (Tc)

Talk to a Human: (608) 338-0082