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MOSFET 2N-CH 30V 1.5A TUMT6
Specifications
Supplier Device Package TUMT6
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V
Configuration 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 240mOhm @ 1.5A, 4.5V
Technology MOSFET (Metal Oxide)
Current 1.5A
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 30V
Mounting Type Surface Mount
Package 6-SMD, Flat Leads
FET Feature Logic Level Gate
Power 1W

Talk to a Human: (608) 338-0082