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Diodes Incorporated

ZXMN6A11GTA

This order may require lead time

Diodes Incorporated

ZXMN6A11GTA

MOSFET N-CH 60V 3.1A SOT223
Specifications
Supplier Device Package SOT-223-3
Vgs(th) (Max) @ Id 3V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 5.7 nC @ 10 V
Current 3.1A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 60 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-261-4, TO-261AA
Power Dissipation (Max) 2W (Ta)

Talk to a Human: (608) 338-0082