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Diodes Incorporated

ZXMP10A18GTA

This order may require lead time

Diodes Incorporated

ZXMP10A18GTA

MOSFET P-CH 100V 2.6A SOT223
Specifications
Supplier Device Package SOT-223-3
Vgs(th) (Max) @ Id 4V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1055 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 2.8A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 26.9 nC @ 10 V
Current 2.6A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-261-4, TO-261AA
Power Dissipation (Max) 2W (Ta)

Talk to a Human: (608) 338-0082