|
|
| Infineon Technologies
|
141 |
-
| MOSFET N-CH 30V 17.2A 8SO | 8-SO | 2.2V @ 250µA | N-Channel | 2910 pF @ 15 V | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | MOSFET (Metal Oxide) | 36 nC @ 4.5 V | 17.2A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
|
| Infineon Technologies
|
138 |
-
| MOSFET P-CH 55V 42A D2PAK | D2PAK | 4V @ 250µA | P-Channel | 3500 pF @ 25 V | 10V | 20mOhm @ 42A, 10V | MOSFET (Metal Oxide) | 180 nC @ 10 V | 42A (Tc) | -55°C ~ 150°C (TJ) | 55 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 170W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
137 |
-
| MOSFET N-CH 80V 8A TO205AF | TO-205AF (TO-39) | - | N-Channel | - | - | - | MOSFET (Metal Oxide) | - | 8A (Tc) | - | 80 V | Through Hole | - | TO-205AF Metal Can | - | - |
|
|
| Onsemi
|
134 |
| MOSFET N-CH 20V 915MA SC75 | SC-75, SOT-416 | 1.1V @ 250µA | N-Channel | 110 pF @ 16 V | 1.5V, 4.5V | 230mOhm @ 600mA, 4.5V | MOSFET (Metal Oxide) | 1.82 nC @ 4.5 V | 915mA (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±6V | SC-75, SOT-416 | 300mW (Tj) | - |
|
|
| Infineon Technologies
|
131 |
-
| MOSFET N-CH 60V 200MA SOT23-3 | PG-SOT23 | 1.8V @ 26µA | N-Channel | 45 pF @ 25 V | 4.5V, 10V | 5Ohm @ 500mA, 10V | MOSFET (Metal Oxide) | 1.5 nC @ 10 V | 200mA (Ta) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 360mW (Ta) | - |
|
|
| Harris Semiconductor
|
129 |
-
| P-CHANNEL POWER MOSFET | TO-220AB | 4V @ 250µA | P-Channel | 180 pF @ 25 V | 10V | 1.2Ohm @ 1.5A, 10V | MOSFET (Metal Oxide) | 11 nC @ 10 V | 3A (Tc) | -55°C ~ 150°C (TJ) | 80 V | Through Hole | ±20V | TO-220-3 | 20W (Tc) | - |
|
|
| Vishay
|
128 |
| MOSFET N-CH 200V 9A D2PAK | D²PAK (TO-263) | 4V @ 250µA | N-Channel | 800 pF @ 25 V | 10V | 400mOhm @ 5.4A, 10V | MOSFET (Metal Oxide) | 43 nC @ 10 V | 9A (Tc) | -55°C ~ 150°C (TJ) | 200 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 3W (Ta), 74W (Tc) | - |
|
|
| Littelfuse
|
122 |
| MOSFET N-CH 2000V 1A TO263 | TO-263AA | 4V @ 250µA | N-Channel | 646 pF @ 25 V | 10V | 40Ohm @ 500mA, 10V | MOSFET (Metal Oxide) | 23.5 nC @ 10 V | 1A (Tc) | -55°C ~ 150°C (TJ) | 2000 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 125W (Tc) | - |
|
|
| Infineon Technologies
|
120 |
-
| MOSFET N-CH 250V 64A D2PAK | PG-TO263-3 | 4V @ 270µA | N-Channel | 7100 pF @ 100 V | 10V | 20mOhm @ 64A, 10V | MOSFET (Metal Oxide) | 86 nC @ 10 V | 64A (Tc) | -55°C ~ 175°C (TJ) | 250 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 300W (Tc) | - |
|
|
| Vishay
|
120 |
| MOSFET N-CH 500V 47A SUPER247 | SUPER-247™ (TO-274AA) | 5V @ 250µA | N-Channel | 8310 pF @ 25 V | 10V | 90mOhm @ 28A, 10V | MOSFET (Metal Oxide) | 350 nC @ 10 V | 47A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±30V | TO-274AA | 540W (Tc) | - |
|
|
| Vishay
|
119 |
| MOSFET P-CH 100V 12A D2PAK | D²PAK (TO-263) | 4V @ 250µA | P-Channel | 860 pF @ 25 V | 10V | 300mOhm @ 7.2A, 10V | MOSFET (Metal Oxide) | 38 nC @ 10 V | 12A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 3.7W (Ta), 88W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
119 |
| MOSFET N-CH 500V 22A TO247-3 | TO-247AC | 4V @ 250µA | N-Channel | 3450 pF @ 25 V | 10V | 230mOhm @ 13A, 10V | MOSFET (Metal Oxide) | 120 nC @ 10 V | 22A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±30V | TO-247-3 | 277W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
119 |
| MOSFET N-CH 200V 18A TO220AB | TO-220 | 4V @ 250µA | N-Channel | 1560 pF @ 25 V | 10V | 180mOhm @ 9A, 10V | MOSFET (Metal Oxide) | 72 nC @ 10 V | 18A (Tc) | 150°C (TJ) | 200 V | Through Hole | ±20V | TO-220-3 | 125W (Tc) | - |
|
|
| Onsemi
|
115 |
| MOSFET N-CH 650V 40A D2PAK-3 | D²PAK-3 (TO-263-3) | 5V @ 4mA | N-Channel | 3410 pF @ 400 V | 10V | 82mOhm @ 20A, 10V | MOSFET (Metal Oxide) | 81 nC @ 10 V | 40A (Tc) | -55°C ~ 150°C (TJ) | 650 V | Surface Mount | ±30V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 313W (Tc) | - |
|
|
| Onsemi
|
115 |
| MOSFET N-CH 650V 10A 4PQFN | 4-PQFN (8x8) | 4.5V @ 200µA | N-Channel | 730 pF @ 400 V | 10V | 360mOhm @ 5A, 10V | MOSFET (Metal Oxide) | 18 nC @ 10 V | 10A (Tc) | -55°C ~ 150°C (TJ) | 650 V | Surface Mount | ±30V | 4-PowerTSFN | 83W (Tc) | - |
|
|
| TOSHIBA
|
111 |
-
| MOSFET N CH 100V 60A SOP ADV | 8-SOP Advance (5x5) | 4V @ 1mA | N-Channel | 5200 pF @ 50 V | 10V | 4.5mOhm @ 30A, 10V | MOSFET (Metal Oxide) | 58 nC @ 10 V | 60A (Tc) | 150°C (TJ) | 100 V | Surface Mount | ±20V | 8-PowerVDFN | 1.6W (Ta), 78W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
110 |
| MOSFET N-CH 500V 46A SUPER247 | SUPER-247™ (TO-274AA) | 5V @ 250µA | N-Channel | 8110 pF @ 25 V | 10V | 100mOhm @ 28A, 10V | MOSFET (Metal Oxide) | 380 nC @ 10 V | 46A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±30V | TO-274AA | 540W (Tc) | - |
|
|
| Nexperia
|
109 |
| MOSFET N-CH 30V 850MA TO236AB | TO-236AB | 400mV @ 1mA (Min) | N-Channel | 83 pF @ 24 V | 2.5V | 400mOhm @ 500mA, 4.5V | MOSFET (Metal Oxide) | 2.1 nC @ 4.5 V | 850mA (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±8V | TO-236-3, SC-59, SOT-23-3 | 540mW (Ta) | - |
|
|
| Harris Semiconductor
|
103 |
-
| MOSFET N-CH 100V 9.2A TO220AB | TO-220AB | 4V @ 250µA | N-Channel | 350 pF @ 25 V | - | 270mOhm @ 5.6A, 10V | MOSFET (Metal Oxide) | 15 nC @ 10 V | 9.2A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Through Hole | ±20V | TO-220-3 | 60W (Tc) | - |
|
|
| IXYS Integrated Circuits Division
|
102 |
| MOSFET N-CH 500V 24A TO247 | TO-247 (IXTH) | 4V @ 250µA | N-Channel | 4200 pF @ 25 V | 10V | 230mOhm @ 12A, 10V | MOSFET (Metal Oxide) | 190 nC @ 10 V | 24A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±20V | TO-247-3 | 300W (Tc) | - |
|
|
| Texas Instruments
|
100 |
-
| MOSFET N-CH 100V 9.7A/50A 8VSON | 8-VSON (3.3x3.3) | 3.6V @ 250µA | N-Channel | 1680 pF @ 50 V | 6V, 10V | 14.5mOhm @ 10A, 10V | MOSFET (Metal Oxide) | 21 nC @ 10 V | 50A (Ta) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±20V | 8-PowerVDFN | 2.8W (Ta), 83W (Tc) | - |
|
|
| Vishay
|
100 |
| MOSFET N-CH 30V 50A PPAK SO-8 | PowerPAK® SO-8 | 2.4V @ 250µA | N-Channel | 3660 pF @ 15 V | 4.5V, 10V | 2.8mOhm @ 20A, 10V | MOSFET (Metal Oxide) | 95 nC @ 10 V | 50A (Tc) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | PowerPAK® SO-8 | 5.2W (Ta), 69W (Tc) | - |
|
|
| Nexperia
|
100 |
| MOSFET N-CH 60V 3.1A TO236AB | TO-236AB | 2.7V @ 250µA | N-Channel | 646 pF @ 30 V | 4.5V, 10V | 60mOhm @ 3.1A, 10V | MOSFET (Metal Oxide) | 19 nC @ 10 V | 3.1A (Ta) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 478mW (Ta), 8.36W (Tc) | - |
|
|
| Infineon Technologies
|
100 |
-
| MOSFET P-CH 55V 42A D2PAK | D2PAK | 4V @ 250µA | P-Channel | 3500 pF @ 25 V | 10V | 20mOhm @ 42A, 10V | MOSFET (Metal Oxide) | 180 nC @ 10 V | 42A (Tc) | -55°C ~ 150°C (TJ) | 55 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 170W (Tc) | - |
|
|
| FAIRCHILD (ONSEMI)
|
100 |
| MOSFET P-CH 100V 4.4A/15A 8MLP | 8-MLP (3.3x3.3) | 4V @ 250µA | P-Channel | 1335 pF @ 50 V | 6V, 10V | 67mOhm @ 4.4A, 10V | MOSFET (Metal Oxide) | 22 nC @ 10 V | 4.4A (Ta), 15A (Tc) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±25V | 8-PowerWDFN | 2.3W (Ta), 40W (Tc) | - |
|
|
| Harris Semiconductor
|
100 |
-
| N-CHANNEL POWER MOSFET | TO-3 | 4V @ 250µA | N-Channel | 1225 pF @ 25 V | 10V | 1.1Ohm @ 4.4A, 10V | MOSFET (Metal Oxide) | 63 nC @ 10 V | 7A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±20V | TO-204AA, TO-3 | 125W (Tc) | - |
|
|
| Harris Semiconductor
|
100 |
-
| MOSFET N-CH 100V 14A TO220AB | TO-220AB | 4V @ 250µA | N-Channel | 670 pF @ 25 V | 10V | 160mOhm @ 8.4A, 10V | MOSFET (Metal Oxide) | 26 nC @ 10 V | 14A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Through Hole | ±20V | TO-220-3 | 88W (Tc) | - |
|
|
| MCMM
|
98 |
| MOSFET P-CH 50V 130MA SOT23 | SOT-23 | 2V @ 250µA | P-Channel | 30 pF @ 25 V | 5V, 10V | 8Ohm @ 100mA, 10V | MOSFET (Metal Oxide) | - | 130mA (Tj) | -55°C ~ 150°C (TJ) | 50 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 225mW | - |
|
|
| Infineon Technologies
|
95 |
-
| MOSFET P-CH 100V 23A D2PAK | D2PAK | 4V @ 250µA | P-Channel | 1450 pF @ 25 V | 10V | 117mOhm @ 14A, 10V | MOSFET (Metal Oxide) | 110 nC @ 10 V | 23A (Tc) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 3.1W (Ta), 110W (Tc) | - |
|
|
| Nexperia
|
93 |
| MOSFET P-CH 30V 200MA SOT323 | SOT-323 | 1.1V @ 250µA | P-Channel | 46 pF @ 15 V | 2.5V, 4.5V | 4.1Ohm @ 200mA, 4.5V | MOSFET (Metal Oxide) | 0.72 nC @ 4.5 V | 200mA (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±8V | SC-70, SOT-323 | 260mW (Ta), 830mW (Tc) | - |
|
|
| Infineon Technologies
|
90 |
-
| MOSFET P-CH 30V 10A 8SO | 8-SO | 1V @ 250µA | P-Channel | 1700 pF @ 25 V | 4.5V, 10V | 20mOhm @ 5.6A, 10V | MOSFET (Metal Oxide) | 92 nC @ 10 V | 10A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
|
| Infineon Technologies
|
88 |
-
| MOSFET N-CH 20V 2.5A SOT23-3 | PG-SOT23 | 1.2V @ 11µA | N-Channel | 419 pF @ 10 V | 2.5V, 4.5V | 50mOhm @ 2.5A, 4.5V | MOSFET (Metal Oxide) | 3.2 nC @ 4.5 V | 2.5A (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±12V | TO-236-3, SC-59, SOT-23-3 | 500mW (Ta) | - |
|
|
| Vishay
|
82 |
| MOSFET N-CH 80V 7.6A PPAK SO-8 | PowerPAK® SO-8 | 2V @ 250µA (Min) | N-Channel | - | 6V, 10V | 16.5mOhm @ 10A, 10V | MOSFET (Metal Oxide) | 41 nC @ 10 V | 7.6A (Ta) | -55°C ~ 150°C (TJ) | 80 V | Surface Mount | ±20V | PowerPAK® SO-8 | 1.9W (Ta) | - |
|
|
| STMicroelectronics
|
78 |
| MOSFET N-CH 950V 7.2A TO247-3 | TO-247-3 | 5V @ 100µA | N-Channel | 1031 pF @ 100 V | 10V | 1.35Ohm @ 3.6A, 10V | MOSFET (Metal Oxide) | 34 nC @ 10 V | 7.2A (Tc) | -55°C ~ 150°C (TJ) | 950 V | Through Hole | ±30V | TO-247-3 | 150W (Tc) | - |
|
|
| Infineon Technologies
|
77 |
-
| MOSFET N-CH 60V 300A 8HSOF | PG-HSOF-8-1 | 3.3V @ 280µA | N-Channel | 16000 pF @ 30 V | 6V, 10V | 0.75mOhm @ 150A, 10V | MOSFET (Metal Oxide) | 287 nC @ 10 V | 300A (Tc) | -55°C ~ 175°C (TJ) | 60 V | Surface Mount | ±20V | 8-PowerSFN | 375W (Tc) | - |
|
|
| GeneSiC Semiconductor
|
75 |
| SIC MOSFET N-CH 41A TO247-4 | TO-247-4 | 2.69V @ 7.5mA | N-Channel | 1560 pF @ 800 V | 15V | 90mOhm @ 20A, 15V | SiCFET (Silicon Carbide) | 54 nC @ 15 V | 41A (Tc) | -55°C ~ 175°C (TJ) | 1200 V | Through Hole | ±15V | TO-247-4 | 207W (Tc) | - |
|
|
| Infineon Technologies
|
70 |
-
| MOSFET N-CH 200V 36A TDSON-8 | PG-TDSON-8-1 | 4V @ 90µA | N-Channel | 2350 pF @ 100 V | 10V | 32mOhm @ 36A, 10V | MOSFET (Metal Oxide) | 29 nC @ 10 V | 36A (Tc) | -55°C ~ 150°C (TJ) | 200 V | Surface Mount | ±20V | 8-PowerTDFN | 125W (Tc) | - |
|
|
| TOSHIBA
|
67 |
-
| MOSFET P-CH 30V 100MA VESM | VESM | 1.7V @ 100µA | P-Channel | 9.1 pF @ 3 V | 2.5V, 4V | 12Ohm @ 10mA, 4V | MOSFET (Metal Oxide) | - | 100mA (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | SOT-723 | 150mW (Ta) | - |
|
|
| Harris Semiconductor
|
64 |
-
| 2.5A, 500V, 3.000 OHM, N-CHANNEL | TO-220AB | 4V @ 250µA | N-Channel | 315 pF @ 25 V | 10V | 3Ohm @ 1.5A, 10V | MOSFET (Metal Oxide) | 17 nC @ 10 V | 4A (Tc) | 150°C (TJ) | 500 V | Through Hole | ±30V | TO-220-3 | 80W (Tc) | - |
|
|
| Infineon Technologies
|
62 |
-
| MOSFET N-CH 100V 10A TO220AB | TO-220AB | 2V @ 250µA | N-Channel | 440 pF @ 25 V | 4V, 10V | 180mOhm @ 6A, 10V | MOSFET (Metal Oxide) | 20 nC @ 5 V | 10A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Through Hole | ±16V | TO-220-3 | 48W (Tc) | - |
|
|
| Infineon Technologies
|
60 |
-
| MOSFET N-CH 80V 40A TSDSON | PG-TSDSON-8-FL | 3.8V @ 31µA | N-Channel | 1820 pF @ 40 V | 6V, 10V | 8.4mOhm @ 20A, 10V | MOSFET (Metal Oxide) | 25 nC @ 10 V | 40A (Tc) | -55°C ~ 150°C (TJ) | 80 V | Surface Mount | ±20V | 8-PowerTDFN | 63W (Tc) | - |
|
|
| Diodes Incorporated
|
60 |
| MOSFET P-CH 20V 1.5A SOT323 | SOT-323 | 1V @ 250µA | P-Channel | 320 pF @ 16 V | 1.8V, 4.5V | 150mOhm @ 2A, 4.5V | MOSFET (Metal Oxide) | - | 1.5A (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±12V | SC-70, SOT-323 | 250mW (Ta) | - |
|
|
| Onsemi
|
59 |
| MOSFET N-CH 150V 1.6A SUPERSOT3 | SOT-23-3 | 4V @ 250µA | N-Channel | 225 pF @ 75 V | 6V, 10V | 261mOhm @ 1.6A, 10V | MOSFET (Metal Oxide) | 5 nC @ 10 V | 1.6A (Ta) | -55°C ~ 150°C (TJ) | 150 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 1.5W (Ta) | - |
|
|
| Infineon Technologies
|
55 |
-
| MOSFET P-CH 60V 150MA SOT323-3 | PG-SOT323 | 2V @ 20µA | P-Channel | 19.1 pF @ 25 V | 4.5V, 10V | 8Ohm @ 150mA, 10V | MOSFET (Metal Oxide) | 1.5 nC @ 10 V | 150mA (Ta) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | SC-70, SOT-323 | 300mW (Ta) | - |
|
|
| Vishay
|
50 |
| MOSFET N-CH 40V 19A 8SO | 8-SOIC | 3V @ 250µA | N-Channel | 2000 pF @ 20 V | 4.5V, 10V | 9mOhm @ 12.4A, 10V | MOSFET (Metal Oxide) | 50 nC @ 10 V | 19A (Tc) | -55°C ~ 150°C (TJ) | 40 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta), 6W (Tc) | - |
|
|
| Onsemi
|
50 |
-
| MOSFET P-CH 30V 11A/40A TO252 | TO-252AA | 3V @ 250µA | P-Channel | 1715 pF @ 15 V | 4.5V, 10V | 20mOhm @ 11A, 10V | MOSFET (Metal Oxide) | 24 nC @ 5 V | 11A (Ta), 40A (Tc) | -55°C ~ 175°C (TJ) | 30 V | Surface Mount | ±25V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 52W (Ta) | - |
|
|
| Infineon Technologies
|
49 |
-
| MOSFET N-CH 800V 17A TO220-3 | PG-TO220-3-1 | 3.9V @ 1mA | N-Channel | 2320 pF @ 25 V | 10V | 290mOhm @ 11A, 10V | MOSFET (Metal Oxide) | 177 nC @ 10 V | 17A (Tc) | -55°C ~ 150°C (TJ) | 800 V | Through Hole | ±20V | TO-220-3 | 208W (Tc) | - |
|
|
| Nexperia
|
48 |
| MOSFET N-CH 30V 870MA SOT323 | SOT-323 | 1.5V @ 250µA | N-Channel | 37 pF @ 25 V | 4.5V | 440mOhm @ 200mA, 4.5V | MOSFET (Metal Oxide) | 0.65 nC @ 4.5 V | 870mA (Tc) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±12V | SC-70, SOT-323 | 560mW (Tc) | - |
|
|
| IXYS Integrated Circuits Division
|
48 |
| MOSFET P-CH 200V 26A TO263 | TO-263AA | 4V @ 250µA | P-Channel | 2740 pF @ 25 V | 10V | 170mOhm @ 13A, 10V | MOSFET (Metal Oxide) | 56 nC @ 10 V | 26A (Tc) | -55°C ~ 175°C (TJ) | 200 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 300W (Tc) | - |
|
|
| Infineon Technologies
|
48 |
-
| MOSFET N-CH 30V 5.3A SOT23 | Micro3™/SOT-23 | 2.3V @ 25µA | N-Channel | 382 pF @ 15 V | 4.5V, 10V | 27mOhm @ 5.2A, 10V | MOSFET (Metal Oxide) | 2.6 nC @ 4.5 V | 5.3A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 1.3W (Ta) | - |
