|
| International Rectifier (Infineon Technologies)
|
4050 |
-
| IRFR1010 - 12V-300V N-CHANNEL PO | D-Pak | 4V @ 100µA | N-Channel | 2840 pF @ 25 V | 10V | 7.5mOhm @ 42A, 10V | MOSFET (Metal Oxide) | 95 nC @ 10 V | 42A (Tc) | -55°C ~ 175°C (TJ) | 55 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 140W (Tc) | - |
|
| Vishay
|
4024 |
| MOSFET N-CH 30V 8.9A 8SO | 8-SOIC | 3V @ 250µA | N-Channel | 1580 pF @ 15 V | 4.5V, 10V | 11mOhm @ 12A, 10V | MOSFET (Metal Oxide) | 38 nC @ 10 V | 8.9A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 1.4W (Ta) | - |
|
| Onsemi
|
4019 |
| MOSFET N-CH 30V 13A 8SOIC | 8-SOIC | 3V @ 250µA | N-Channel | 2220 pF @ 15 V | 4.5V, 10V | 8mOhm @ 13A, 10V | MOSFET (Metal Oxide) | 30 nC @ 5 V | 13A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
| Onsemi
|
3844 |
| MOSFET N-CH 100V 10A DPAK | TO-252AA | 2V @ 250µA | N-Channel | 520 pF @ 25 V | 5V, 10V | 180mOhm @ 5A, 10V | MOSFET (Metal Oxide) | 12 nC @ 5 V | 10A (Tc) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.5W (Ta), 40W (Tc) | - |
|
| STMicroelectronics
|
3830 |
| MOSFET N-CH 100V 23A DPAK | DPAK | 4V @ 250µA | N-Channel | 870 pF @ 25 V | 10V | 65mOhm @ 12A, 10V | MOSFET (Metal Oxide) | 40 nC @ 10 V | 23A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 70W (Tc) | - |
|
| Infineon Technologies
|
3760 |
-
| MOSFET N-CH 650V 10.6A TO252-3 | PG-TO252-3 | 3.5V @ 320µA | N-Channel | 710 pF @ 100 V | 10V | 380mOhm @ 3.2A, 10V | MOSFET (Metal Oxide) | 39 nC @ 10 V | 10.6A (Tc) | -55°C ~ 150°C (TJ) | 650 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 83W (Tc) | - |
|
| Onsemi
|
3700 |
| MOSFET P-CH 30V 3.7A SOT223 | SOT-223 (TO-261) | 3V @ 250µA | P-Channel | 950 pF @ 25 V | 4.5V, 10V | 100mOhm @ 5.2A, 10V | MOSFET (Metal Oxide) | 38 nC @ 10 V | 3.7A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | TO-261-4, TO-261AA | 1.56W (Ta) | - |
|
| Nexperia
|
3673 |
| MOSFET N-CH 100V 1.9A TO236AB | TO-236AB | 4V @ 1mA | N-Channel | 330 pF @ 20 V | 10V | 250mOhm @ 500mA, 10V | MOSFET (Metal Oxide) | 7 nC @ 10 V | 1.9A (Tc) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±30V | TO-236-3, SC-59, SOT-23-3 | 280mW (Tj) | - |
|
| FAIRCHILD (ONSEMI)
|
3612 |
| MOSFET P-CH 20V 11A 8SOIC | 8-SOIC | 1.5V @ 250µA | P-Channel | 4044 pF @ 10 V | 2.5V, 4.5V | 14mOhm @ 11A, 4.5V | MOSFET (Metal Oxide) | 60 nC @ 4.5 V | 11A (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±12V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
| Vishay
|
3562 |
| MOSFET N-CH 60V 2.3A SOT23-3 | SOT-23-3 (TO-236) | 3V @ 250µA | N-Channel | 190 pF @ 30 V | 4.5V, 10V | 156mOhm @ 1.9A, 10V | MOSFET (Metal Oxide) | 6.8 nC @ 10 V | 2.3A (Tc) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 1.09W (Ta), 1.66W (Tc) | - |
|
| Diodes Incorporated
|
3480 |
| MOSFET P-CH 60V 7.7A PWRDI3333-8 | PowerDI3333-8 | 3V @ 250µA | P-Channel | 2569 pF @ 30 V | 4.5V, 10V | 25mOhm @ 5A, 10V | MOSFET (Metal Oxide) | 53.1 nC @ 10 V | 7.7A (Ta) | -55°C ~ 155°C (TJ) | 60 V | Surface Mount | ±20V | 8-PowerVDFN | 1W (Ta) | - |
|
| Infineon Technologies
|
3476 |
-
| MOSFET N-CH 100V 9.4A IPAK | IPAK (TO-251AA) | 4V @ 250µA | N-Channel | 330 pF @ 25 V | 10V | 210mOhm @ 5.6A, 10V | MOSFET (Metal Oxide) | 25 nC @ 10 V | 9.4A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Through Hole | ±20V | TO-251-3 Short Leads, IPak, TO-251AA | 48W (Tc) | - |
|
| STMicroelectronics
|
3473 |
| MOSFET N-CH 600V 11A DPAK | DPAK | 5V @ 250µA | N-Channel | 730 pF @ 100 V | 10V | 365mOhm @ 5.5A, 10V | MOSFET (Metal Oxide) | 19 nC @ 10 V | 11A (Tc) | -55°C ~ 150°C (TJ) | 600 V | Surface Mount | ±25V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 110W (Tc) | - |
|
| Infineon Technologies
|
3361 |
-
| MOSFET N-CH 55V 44A DPAK | D-Pak | 4V @ 250µA | N-Channel | 1300 pF @ 25 V | 10V | 27mOhm @ 26A, 10V | MOSFET (Metal Oxide) | 65 nC @ 10 V | 44A (Tc) | -55°C ~ 175°C (TJ) | 55 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 107W (Tc) | - |
|
| Vishay
|
3342 |
| P-CHANNEL 20-V (D-S) MOSFET | SOT-23-3 (TO-236) | 1V @ 250µA | P-Channel | 1160 pF @ 10 V | 1.8V, 4.5V | 39mOhm @ 4.1A, 4.5V | MOSFET (Metal Oxide) | 36 nC @ 8 V | 4.1A (Ta), 5.3A (Tc) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±8V | TO-236-3, SC-59, SOT-23-3 | 960mW (Ta), 1.7W (Tc) | - |
|
| International Rectifier (Infineon Technologies)
|
3322 |
-
| MOSFET N-CH 30V 8.3A 8SO | 8-SO | 1V @ 250µA | N-Channel | - | 4.5V | 25mOhm @ 7A, 4.5V | MOSFET (Metal Oxide) | 17 nC @ 5 V | 8.3A (Ta) | - | 30 V | Surface Mount | ±12V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Tc) | - |
|
| Vishay
|
3229 |
| MOSFET N-CH 30V 18.2A 8SO | 8-SOIC | 3V @ 250µA | N-Channel | 1220 pF @ 15 V | 4.5V, 10V | 9.5mOhm @ 13.8A, 10V | MOSFET (Metal Oxide) | 26 nC @ 10 V | 18.2A (Tc) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 3W (Ta), 5.2W (Tc) | - |
|
| Nexperia
|
3111 |
| MOSFET P-CH 20V 2A TO236AB | TO-236AB | 1.1V @ 250µA | P-Channel | 380 pF @ 6 V | 2.5V, 4.5V | 120mOhm @ 1A, 4.5V | MOSFET (Metal Oxide) | 6 nC @ 4.5 V | 2A (Ta) | 150°C (TJ) | 20 V | Surface Mount | ±8V | TO-236-3, SC-59, SOT-23-3 | 400mW (Ta), 2.8W (Tc) | - |
|
| Diodes Incorporated
|
3056 |
| MOSFET N-CH 20V 4.2A SOT23-3 | SOT-23-3 | 1V @ 50µA | N-Channel | 594.3 pF @ 10 V | 2.5V, 4.5V | 90mOhm @ 3.6A, 4.5V | MOSFET (Metal Oxide) | 7 nC @ 4.5 V | 4.2A (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±8V | TO-236-3, SC-59, SOT-23-3 | 800mW (Ta) | - |
|
| International Rectifier (Infineon Technologies)
|
3022 |
| MOSFET P-CH 60V 1.8A SOT223 | SOT-223 | 4V @ 250µA | P-Channel | 270 pF @ 25 V | 10V | 500mOhm @ 1.1A, 10V | MOSFET (Metal Oxide) | 12 nC @ 10 V | 1.8A (Tc) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-261-4, TO-261AA | 2W (Ta), 3.1W (Tc) | - |
|
| Onsemi
|
3000 |
| MOSFET P-CH 60V 180MA SOT-23 | SOT-23-3 | 3V @ 250µA | P-Channel | 79 pF @ 25 V | 4.5V, 10V | 5Ohm @ 500mA, 10V | MOSFET (Metal Oxide) | 2.5 nC @ 10 V | 180mA (Ta) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 360mW (Ta) | - |
|
| Rohm Semiconductor
|
3000 |
-
| MOSFET N-CH 30V 2A TSMT5 | TSMT5 | 1.5V @ 1mA | N-Channel | 175 pF @ 10 V | 2.5V, 4.5V | 100mOhm @ 2A, 4.5V | MOSFET (Metal Oxide) | 3.9 nC @ 4.5 V | 2A (Ta) | 150°C (TJ) | 30 V | Surface Mount | ±12V | SOT-23-5 Thin, TSOT-23-5 | 1.25W (Ta) | Schottky Diode (Isolated) |
|
| Rohm Semiconductor
|
2950 |
| MOSFET N-CH 30V 2.5A TSMT3 | TSMT3 | 2.5V @ 1mA | N-Channel | 165 pF @ 10 V | 4V, 10V | 70mOhm @ 2.5A, 10V | MOSFET (Metal Oxide) | 4.1 nC @ 5 V | 2.5A (Ta) | 150°C (TJ) | 30 V | Surface Mount | 20V | SC-96 | 1W (Ta) | - |
|
| Nexperia
|
2878 |
| MOSFET N-CH 60V 300MA TO236AB | TO-236AB | 2V @ 1mA | N-Channel | 40 pF @ 10 V | 4.5V, 10V | 5Ohm @ 500mA, 10V | MOSFET (Metal Oxide) | - | 300mA (Ta) | -65°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 830mW (Tc) | - |
|
| STMicroelectronics
|
2875 |
| MOSFET N-CH 100V 50A TO220AB | TO-220 | 4V @ 250µA | N-Channel | 6000 pF @ 25 V | 10V | 27mOhm @ 25A, 10V | MOSFET (Metal Oxide) | 166 nC @ 10 V | 50A (Tc) | 175°C (TJ) | 100 V | Through Hole | ±20V | TO-220-3 | 180W (Tc) | - |
|
| Diodes Incorporated
|
2807 |
| MOSFET N-CH 100V 170MA SOT23-3 | SOT-23-3 | 2V @ 1mA | N-Channel | 60 pF @ 25 V | 10V | 6Ohm @ 170mA, 10V | MOSFET (Metal Oxide) | - | 170mA (Ta) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 300mW (Ta) | - |
|
| Efficient Power Conversion
|
2717 |
| GANFET N-CH 100V 36A DIE OUTLINE | Die | 2.5V @ 5mA | N-Channel | 900 pF @ 50 V | 5V | 7mOhm @ 25A, 5V | GaNFET (Gallium Nitride) | 9 nC @ 5 V | 36A (Ta) | -40°C ~ 150°C (TJ) | 100 V | Surface Mount | +6V, -4V | Die | - | - |
|
| Diodes Incorporated
|
2682 |
| MOSFET N-CH 20V 1A SOT323 | SOT-323 | 1V @ 250µA | N-Channel | 60.67 pF @ 16 V | 1.8V, 4.5V | 450mOhm @ 600mA, 4.5V | MOSFET (Metal Oxide) | 0.74 nC @ 4.5 V | 1A (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±6V | SC-70, SOT-323 | 290mW (Ta) | - |
|
| International Rectifier (Infineon Technologies)
|
2644 |
| MOSFET P-CH 60V 1.8A SOT223 | SOT-223 | 4V @ 250µA | P-Channel | 270 pF @ 25 V | 10V | 500mOhm @ 1.1A, 10V | MOSFET (Metal Oxide) | 12 nC @ 10 V | 1.8A (Tc) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-261-4, TO-261AA | 2W (Ta), 3.1W (Tc) | - |
|
| Infineon Technologies
|
2631 |
-
| MOSFET N-CH 80V 40A TSDSON | PG-TSDSON-8-FL | 2.3V @ 36µA | N-Channel | 2340 pF @ 40 V | 4.5V, 10V | 7mOhm @ 20A, 10V | MOSFET (Metal Oxide) | 5 nC @ 4.5 V | 40A (Tc) | -55°C ~ 150°C (TJ) | 80 V | Surface Mount | ±20V | 8-PowerTDFN | 69W (Tc) | Standard |
|
| FAIRCHILD (ONSEMI)
|
2589 |
| MOSFET N-CH 60V 25A/80A 8PQFN | 8-PQFN (5x6) | 3V @ 250µA | N-Channel | 12530 pF @ 30 V | 4.5V, 10V | 2.5mOhm @ 25A, 10V | MOSFET (Metal Oxide) | 165 nC @ 10 V | 25A (Ta), 80A (Tc) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | 8-PowerTDFN | 2.5W (Ta), 104W (Tc) | - |
|
| FAIRCHILD (ONSEMI)
|
2551 |
| MOSFET P-CH 60V 2.5A SOT-223-4 | SOT-223-4 | 4V @ 250µA | P-Channel | 601 pF @ 30 V | 4.5V, 10V | 300mOhm @ 2.5A, 10V | MOSFET (Metal Oxide) | 15 nC @ 10 V | 2.5A (Ta) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-261-4, TO-261AA | 3W (Ta) | - |
|
| Nexperia
|
2540 |
| MOSFET N-CH 60V 310MA SOT323 | SOT-323 | 2.1V @ 250µA | N-Channel | 50 pF @ 10 V | 10V | 1.6Ohm @ 500mA, 10V | MOSFET (Metal Oxide) | 0.6 nC @ 4.5 V | 310mA (Ta) | 150°C (TJ) | 60 V | Surface Mount | ±20V | SC-70, SOT-323 | 275mW (Ta) | - |
|
| International Rectifier (Infineon Technologies)
|
2532 |
-
| MOSFET P-CH 20V 2.6A SOT23 | Micro3™/SOT-23 | 1.1V @ 10µA | P-Channel | 220 pF @ 16 V | 2.5V, 4.5V | 135mOhm @ 2.6A, 4.5V | MOSFET (Metal Oxide) | 2.9 nC @ 4.5 V | 2.6A (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±12V | TO-236-3, SC-59, SOT-23-3 | 1.3W (Ta) | - |
|
| SGS
|
2528 |
| MOSFET N-CH 55V 80A DPAK | DPAK | 4V @ 250µA | N-Channel | 2200 pF @ 25 V | 10V | 8.5mOhm @ 32A, 10V | MOSFET (Metal Oxide) | 45 nC @ 10 V | 80A (Tc) | -55°C ~ 175°C (TJ) | 55 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 110W (Tc) | - |
|
| UMW
|
2518 |
| TO-252 MOSFETS ROHS | TO-252 (DPAK) | 2.5V @ 250µA | N-Channel | 1562 pF @ 25 V | 4.5V, 10V | 35mOhm @ 15A, 10V | MOSFET (Metal Oxide) | 25 nC @ 10 V | 30A (Tc) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55W (Tc) | - |
|
| FAIRCHILD (ONSEMI)
|
2511 |
-
| FDMC8200 - DUAL N-CHANNEL POWERT | 8-Power33 (3x3) | 3V @ 250µA | - | 660pF @ 15V | - | 20mOhm @ 6A, 10V | MOSFET (Metal Oxide) | 10nC @ 10V | 8A, 12A | -55°C ~ 150°C (TJ) | 30V | Surface Mount | - | 8-PowerWDFN | - | Logic Level Gate |
|
| Diodes Incorporated
|
2500 |
| MOSFET P-CH 45V 90MA SOT23-3 | SOT-23-3 | 3.5V @ 1mA | P-Channel | 25 pF @ 10 V | 10V | 14Ohm @ 200mA, 10V | MOSFET (Metal Oxide) | - | 90mA (Ta) | -55°C ~ 150°C (TJ) | 45 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 330mW (Ta) | - |
|
| FAIRCHILD (ONSEMI)
|
2500 |
-
| SMALL SIGNAL FIELD-EFFECT TRANSI | SuperSOT™-6 | 3V @ 250µA | P-Channel | 470 pF @ 25 V | 4.5V, 10V | 50mOhm @ 4A, 10V | MOSFET (Metal Oxide) | 8.1 nC @ 5 V | 4A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±25V | SOT-23-6 Thin, TSOT-23-6 | 1.6W (Ta) | - |
|
| UMW
|
2500 |
| TO-252 MOSFETS ROHS | TO-252 (DPAK) | 2.5V @ 250µA | N-Channel | 1562 pF @ 25 V | 4.5V, 10V | 29mOhm @ 15A, 10V | MOSFET (Metal Oxide) | 25 nC @ 10 V | 30A (Tc) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55W (Tc) | - |
|
| Diodes Incorporated
|
2500 |
| MOSFET P-CH 450V 4.7A TO252 | TO-252, (D-Pak) | 5V @ 250µA | P-Channel | 564 pF @ 25 V | 10V | 4.9Ohm @ 1.05A, 10V | MOSFET (Metal Oxide) | 13.7 nC @ 10 V | 4.7A (Tc) | -55°C ~ 150°C (TJ) | 450 V | Surface Mount | ±30V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 104W (Tc) | - |
|
| STMicroelectronics
|
2500 |
-
| MOSFET N-CH 60V 60A DPAK | DPAK | 4V @ 250µA | N-Channel | 1810 pF @ 25 V | 10V | 16mOhm @ 30A, 10V | MOSFET (Metal Oxide) | 66 nC @ 10 V | 60A (Tc) | -55°C ~ 175°C (TJ) | 60 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 110W (Tc) | - |
|
| Vishay
|
2493 |
| MOSFET P-CH 60V 4.7A 8SO | 8-SOIC | 3V @ 250µA | P-Channel | 600 pF @ 30 V | 4.5V, 10V | 120mOhm @ 3.2A, 10V | MOSFET (Metal Oxide) | 22 nC @ 10 V | 4.7A (Tc) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 5W (Tc) | - |
|
| Onsemi
|
2468 |
| MOSFET N-CH 100V 6.6A SOT223-4 | SOT-223-4 | 3V @ 250µA | N-Channel | 1490 pF @ 50 V | 4.5V, 10V | 28mOhm @ 6.6A, 10V | MOSFET (Metal Oxide) | 25 nC @ 10 V | 6.6A (Ta) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±20V | TO-261-4, TO-261AA | 2.2W (Ta) | - |
|
| Vishay
|
2456 |
| MOSFET N-CH 150V 2.7A 8SO | 8-SOIC | 2V @ 250µA (Min) | N-Channel | - | 6V, 10V | 85mOhm @ 3.5A, 10V | MOSFET (Metal Oxide) | 21 nC @ 10 V | 2.7A (Ta) | -55°C ~ 150°C (TJ) | 150 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 1.5W (Ta) | - |
|
| Infineon Technologies
|
2453 |
-
| MOSFET N-CH 30V 12A/44A TDSON | PG-TDSON-8-5 | 2V @ 250µA | N-Channel | 1700 pF @ 15 V | 4.5V, 10V | 10mOhm @ 30A, 10V | MOSFET (Metal Oxide) | 23 nC @ 10 V | 12A (Ta), 44A (Tc) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-PowerTDFN | 2.5W (Ta), 30W (Tc) | - |
|
| TOSHIBA
|
2452 |
-
| MOSFET P-CH 20V 36A 8TSON | 8-TSON Advance (3.1x3.1) | 1.2V @ 1mA | P-Channel | 4300 pF @ 10 V | 2.5V, 4.5V | 4.7mOhm @ 18A, 4.5V | MOSFET (Metal Oxide) | 65 nC @ 5 V | 36A (Tc) | 150°C (TJ) | 20 V | Surface Mount | ±12V | 8-PowerVDFN | 42W (Tc) | - |
|
| Onsemi
|
2390 |
-
| MOSFET P-CH 30V 8.8A 8SOIC | 8-SOIC | 3V @ 250µA | P-Channel | 1845 pF @ 15 V | 4.5V, 10V | 20mOhm @ 8.8A, 10V | MOSFET (Metal Oxide) | 40 nC @ 10 V | 8.8A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±25V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
| Diodes Incorporated
|
2345 |
| MOSFET N-CH 100V 1.5A SOT26 | SOT-26 | 4V @ 250µA | N-Channel | 405 pF @ 50 V | 6V, 10V | 250mOhm @ 3.2A, 10V | MOSFET (Metal Oxide) | 7.7 nC @ 10 V | 1.5A (Ta) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±20V | SOT-23-6 | 1.1W (Ta) | - |
|
| Diodes Incorporated
|
2327 |
| MOSFET P-CH 100V 3A TO252-3 | TO-252-3 | 4V @ 250µA | P-Channel | 717 pF @ 50 V | 6V, 10V | 235mOhm @ 2.1A, 10V | MOSFET (Metal Oxide) | 16.5 nC @ 10 V | 3A (Ta) | -55°C ~ 150°C (TJ) | 100 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.15W (Ta) | - |