|
|
| Harris Semiconductor
|
- |
-
| MOSFET P-CH 100V 1A 4DIP | 4-HVMDIP | 4V @ 250µA | P-Channel | 390 pF @ 25 V | 10V | 600mOhm @ 600mA, 10V | MOSFET (Metal Oxide) | 18 nC @ 10 V | 1A (Ta) | -55°C ~ 175°C (TJ) | 100 V | Through Hole | ±20V | 4-DIP (0.300", 7.62mm) | 1.3W (Ta) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
| MOSFET N-CH 60V 2.5A 4DIP | 4-HVMDIP | 4V @ 250µA | N-Channel | 640 pF @ 25 V | 10V | 100mOhm @ 1.5A, 10V | MOSFET (Metal Oxide) | 25 nC @ 10 V | 2.5A (Ta) | -55°C ~ 175°C (TJ) | 60 V | Through Hole | ±20V | 4-DIP (0.300", 7.62mm) | 1.3W (Ta) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 900V 1.7A I2PAK | I2PAK | 4V @ 250µA | N-Channel | 490 pF @ 25 V | 10V | 8Ohm @ 1A, 10V | MOSFET (Metal Oxide) | 38 nC @ 10 V | 1.7A (Tc) | -55°C ~ 150°C (TJ) | 900 V | Through Hole | ±20V | TO-262-3 Long Leads, I²Pak, TO-262AA | 3.1W (Ta), 54W (Tc) | - |
|
|
| Infineon Technologies
|
- |
| MOSFET N-CH 60V 70A TO247-3 | TO-247AC | 4V @ 250µA | N-Channel | 4500 pF @ 25 V | 10V | 14mOhm @ 54A, 10V | MOSFET (Metal Oxide) | 160 nC @ 10 V | 70A (Tc) | -55°C ~ 175°C (TJ) | 60 V | Through Hole | ±20V | TO-247-3 | 230W (Tc) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 200V 33A TO247-3 | TO-247-3 | 4V @ 250µA | N-Channel | 2850 pF @ 25 V | 10V | 85mOhm @ 16A, 10V | MOSFET (Metal Oxide) | 158 nC @ 10 V | 33A (Tc) | 150°C (TJ) | 200 V | Through Hole | ±20V | TO-247-3 | 180W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 200V 30A TO247AC | TO-247AC | 4V @ 250µA | N-Channel | 2159 pF @ 25 V | 10V | 75mOhm @ 18A, 10V | MOSFET (Metal Oxide) | 123 nC @ 10 V | 30A (Tc) | -55°C ~ 175°C (TJ) | 200 V | Through Hole | ±20V | TO-247-3 | 214W (Tc) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 400V 11A TO247-3 | TO-247AC | 4V @ 250µA | N-Channel | 1400 pF @ 25 V | 10V | 550mOhm @ 6.6A, 10V | MOSFET (Metal Oxide) | 62 nC @ 10 V | 11A (Tc) | -55°C ~ 150°C (TJ) | 400 V | Through Hole | ±20V | TO-247-3 | 150W (Tc) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 500V 14A TO247-3 | TO-247AC | 4V @ 250µA | N-Channel | 2600 pF @ 25 V | 10V | 400mOhm @ 8.4A, 10V | MOSFET (Metal Oxide) | 150 nC @ 10 V | 14A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±20V | TO-247-3 | 190W (Tc) | - |
|
|
| INTERSIL ( RENESAS )
|
- |
| MOSFET P-CH 100V 21A TO247-3 | TO-247AC | 4V @ 250µA | P-Channel | 1400 pF @ 25 V | 10V | 200mOhm @ 13A, 10V | MOSFET (Metal Oxide) | 61 nC @ 10 V | 21A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Through Hole | ±20V | TO-247-3 | 180W (Tc) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 900V 6.7A TO247-3 | TO-247AC | 4V @ 250µA | N-Channel | 2900 pF @ 25 V | 10V | 1.6Ohm @ 4A, 10V | MOSFET (Metal Oxide) | 200 nC @ 10 V | 6.7A (Tc) | -55°C ~ 150°C (TJ) | 900 V | Through Hole | ±20V | TO-247-3 | 190W (Tc) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 1000V 4.3A TO247-3 | TO-247AC | 4V @ 250µA | N-Channel | 1600 pF @ 25 V | 10V | 3.5Ohm @ 2.6A, 10V | MOSFET (Metal Oxide) | 120 nC @ 10 V | 4.3A (Tc) | -55°C ~ 150°C (TJ) | 1000 V | Through Hole | ±20V | TO-247-3 | 150W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
| MOSFET N-CH 600V 3.6A TO220AB | TO-220AB | 4V @ 250µA | N-Channel | 660 pF @ 25 V | 10V | 2.2Ohm @ 2.2A, 10V | MOSFET (Metal Oxide) | 31 nC @ 10 V | 3.6A (Tc) | -55°C ~ 150°C (TJ) | 600 V | Through Hole | ±20V | TO-220-3 | 74W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 150V 35A TO220AB | TO-220AB | 5V @ 100µA | N-Channel | 1750 pF @ 50 V | 10V | 39mOhm @ 21A, 10V | MOSFET (Metal Oxide) | 40 nC @ 10 V | 35A (Tc) | -55°C ~ 175°C (TJ) | 150 V | Through Hole | ±20V | TO-220-3 | 144W (Tc) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET N-CH 200V 18A TO220AB | TO-220AB | 4.9V @ 100µA | N-Channel | 1200 pF @ 50 V | 10V | 100mOhm @ 11A, 10V | MOSFET (Metal Oxide) | 29 nC @ 10 V | 18A (Tc) | -55°C ~ 175°C (TJ) | 200 V | Through Hole | ±20V | TO-220-3 | 100W (Tc) | - |
|
|
| Texas Instruments
|
- |
-
| IRFR220 - 12V-300V N-CHANNEL POW | D-Pak | 4V @ 250µA | N-Channel | 300 pF @ 25 V | 10V | 600mOhm @ 2.9A, 10V | MOSFET (Metal Oxide) | 23 nC @ 10 V | 5A (Tc) | -55°C ~ 175°C (TJ) | 200 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 43W (Tc) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 400V 1.7A DPAK | D-Pak | 4V @ 250µA | N-Channel | 170 pF @ 25 V | 10V | 3.6Ohm @ 1A, 10V | MOSFET (Metal Oxide) | 12 nC @ 10 V | 1.7A (Tc) | -55°C ~ 150°C (TJ) | 400 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.5W (Ta), 25W (Tc) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 500V 16A TO220AB | TO-220AB | 5V @ 250µA | N-Channel | 2760 pF @ 25 V | 10V | 320mOhm @ 9.9A, 10V | MOSFET (Metal Oxide) | 130 nC @ 10 V | 16A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±30V | TO-220-3 | 220W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 30V 86A DPAK | D-Pak | 2.25V @ 250µA | N-Channel | 2330 pF @ 15 V | 4.5V, 10V | 6.5mOhm @ 15A, 10V | MOSFET (Metal Oxide) | 26 nC @ 4.5 V | 86A (Tc) | -55°C ~ 175°C (TJ) | 30 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 79W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET P-CH 55V 12A D2PAK | D2PAK | 4V @ 250µA | P-Channel | 350 pF @ 25 V | 10V | 175mOhm @ 7.2A, 10V | MOSFET (Metal Oxide) | 19 nC @ 10 V | 12A (Tc) | -55°C ~ 175°C (TJ) | 55 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 3.8W (Ta), 45W (Tc) | - |
|
|
| SLKOR
|
- |
-
| IRF9540 - 19A, 100V, 0.2OHM, P-C | TO-220AB | 4V @ 250µA | P-Channel | 1400 pF @ 25 V | 10V | 200mOhm @ 11A, 10V | MOSFET (Metal Oxide) | 61 nC @ 10 V | 19A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Through Hole | ±20V | TO-220-3 | 150W (Tc) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET P-CH 55V 18A DPAK | D-Pak | 4V @ 250µA | P-Channel | 650 pF @ 25 V | 10V | 110mOhm @ 9.6A, 10V | MOSFET (Metal Oxide) | 32 nC @ 10 V | 18A (Tc) | -55°C ~ 150°C (TJ) | 55 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 57W (Tc) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET P-CH 150V 13A DPAK | D-Pak | 4V @ 250µA | P-Channel | 860 pF @ 25 V | 10V | 295mOhm @ 6.6A, 10V | MOSFET (Metal Oxide) | 66 nC @ 10 V | 13A (Tc) | -55°C ~ 175°C (TJ) | 150 V | Surface Mount | ±20V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 110W (Tc) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET P-CH 100V 14A TO220AB | TO-220AB | 4V @ 250µA | P-Channel | 760 pF @ 25 V | 10V | 200mOhm @ 8.4A, 10V | MOSFET (Metal Oxide) | 58 nC @ 10 V | 14A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Through Hole | ±20V | TO-220-3 | 79W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET P-CH 100V 12A TO220AB | TO-220AB | 4V @ 250µA | P-Channel | 500 pF @ 25 V | - | 300mOhm @ 6.5A, 10V | MOSFET (Metal Oxide) | 45 nC @ 10 V | 12A (Tc) | -55°C ~ 150°C (TJ) | 100 V | Through Hole | ±20V | TO-220-3 | 75W (Tc) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET P-CH 30V 9.8A 8SO | 8-SO | 2.4V @ 25µA | P-Channel | 1270 pF @ 25 V | 4.5V, 10V | 17.5mOhm @ 9.8A, 10V | MOSFET (Metal Oxide) | 41 nC @ 10 V | 9.8A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET N-CH 100V 190A D2PAK | D2PAK | 4V @ 250µA | N-Channel | 9830 pF @ 50 V | 10V | 4mOhm @ 110A, 10V | MOSFET (Metal Oxide) | 230 nC @ 10 V | 190A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Surface Mount | ±20V | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | 380W (Tc) | - |
|
|
| Vishay
|
- |
| MOSFET N-CH 500V 8A TO220AB | TO-220AB | 4V @ 250µA | N-Channel | 1300 pF @ 25 V | 10V | 850mOhm @ 4.8A, 10V | MOSFET (Metal Oxide) | 63 nC @ 10 V | 8A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±20V | TO-220-3 | 125W (Tc) | - |
|
|
| Minos
|
- |
| MOSFET N-CH 500V 8A TO220AB | TO-220AB | 4V @ 250µA | N-Channel | 1300 pF @ 25 V | 10V | 850mOhm @ 4.8A, 10V | MOSFET (Metal Oxide) | 63 nC @ 10 V | 8A (Tc) | -55°C ~ 150°C (TJ) | 500 V | Through Hole | ±20V | TO-220-3 | 125W (Tc) | - |
|
|
| Infineon Technologies
|
- |
-
| SMALL SIGNAL FIELDCHANNEL, SILIC | 8-SO | 3V @ 250µA | N-Channel | 1801 pF @ 10 V | 4.5V | 14mOhm @ 15A, 4.5V | MOSFET (Metal Oxide) | 26 nC @ 5 V | 10.8A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET N-CH 60V 48A D2PAK | D2PAK | 4V @ 250µA | N-Channel | 1360 pF @ 25 V | 10V | 23mOhm @ 29A, 10V | MOSFET (Metal Oxide) | 60 nC @ 10 V | 48A (Tc) | -55°C ~ 175°C (TJ) | 60 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 110W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 55V 51A D2PAK | D2PAK | 4V @ 250µA | N-Channel | 1420 pF @ 25 V | 10V | 13.9mOhm @ 31A, 10V | MOSFET (Metal Oxide) | 43 nC @ 10 V | 51A (Tc) | -55°C ~ 175°C (TJ) | 55 V | Surface Mount | ±20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 80W (Tc) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET N-CH 80V 9.3A 8SO | 8-SO | 4V @ 250µA | N-Channel | 1510 pF @ 25 V | 10V | 15mOhm @ 5.6A, 10V | MOSFET (Metal Oxide) | 53 nC @ 10 V | 9.3A (Tc) | -55°C ~ 150°C (TJ) | 80 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 100V 10A D2PAK | D2PAK | 2V @ 250µA | N-Channel | 440 pF @ 25 V | 4V, 10V | 180mOhm @ 6A, 10V | MOSFET (Metal Oxide) | 20 nC @ 5 V | 10A (Tc) | -55°C ~ 175°C (TJ) | 100 V | Surface Mount | ±16V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 3.8W (Ta), 48W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 55V 5A SOT223 | SOT-223 | 3V @ 250µA | N-Channel | 380 pF @ 25 V | 4.5V, 10V | 60mOhm @ 3A, 10V | MOSFET (Metal Oxide) | 11 nC @ 5 V | 5A (Tc) | -55°C ~ 150°C (TJ) | 55 V | Surface Mount | ±16V | TO-261-4, TO-261AA | 1W (Ta) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 55V 3.8A SOT223 | SOT-223 | 2V @ 250µA | N-Channel | 870 pF @ 25 V | 4V, 10V | 40mOhm @ 3.8A, 10V | MOSFET (Metal Oxide) | 48 nC @ 10 V | 3.8A (Ta) | -55°C ~ 150°C (TJ) | 55 V | Surface Mount | ±16V | TO-261-4, TO-261AA | 1W (Ta) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET N-CH 60V 2.7A SOT23 | Micro3™/SOT-23 | 2.5V @ 25µA | N-Channel | 290 pF @ 25 V | 4.5V, 10V | 92mOhm @ 2.7A, 10V | MOSFET (Metal Oxide) | 2.5 nC @ 4.5 V | 2.7A (Ta) | -55°C ~ 150°C (TJ) | 60 V | Surface Mount | ±16V | TO-236-3, SC-59, SOT-23-3 | 1.25W (Ta) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| AUTOMOTIVE HEXFET P-CHANNEL POWE | 8-SO | 1V @ 250µA | P-Channel | 1100 pF @ 25 V | 4.5V, 10V | 45mOhm @ 2.8A, 10V | MOSFET (Metal Oxide) | 59 nC @ 10 V | 5.8A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET P-CH 40V 6.2A 8SO | 8-SO | 3V @ 250µA | P-Channel | 3220 pF @ 25 V | 4.5V, 10V | 41mOhm @ 6.2A, 10V | MOSFET (Metal Oxide) | 80 nC @ 10 V | 6.2A (Ta) | -55°C ~ 150°C (TJ) | 40 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
|
| MSKSEMI
|
- |
| 20V 4.2A 1.25W [email protected],4.2A 1. | SOT-23 | 1.2V @ 50µA | N-Channel | 300 pF @ 10 V | 2.5V, 4.5V | 45mOhm @ 4.2A, 4.5V | MOSFET (Metal Oxide) | 10 nC @ 4.5 V | 4.2A (Ta) | 150°C (TJ) | 20 V | Surface Mount | ±12V | TO-236-3, SC-59, SOT-23-3 | 1.25W (Ta) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET N-CH 20V 4.2A SOT23 | Micro3™/SOT-23 | 1.2V @ 250µA | N-Channel | 740 pF @ 15 V | 2.5V, 4.5V | 45mOhm @ 4.2A, 4.5V | MOSFET (Metal Oxide) | 12 nC @ 5 V | 4.2A (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±12V | TO-236-3, SC-59, SOT-23-3 | 1.25W (Ta) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET N-CH 30V 1.2A SOT23 | Micro3™/SOT-23 | 1V @ 250µA | N-Channel | 85 pF @ 25 V | 4.5V, 10V | 250mOhm @ 910mA, 10V | MOSFET (Metal Oxide) | 5 nC @ 10 V | 1.2A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 540mW (Ta) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET P-CH 40V 10.5A 8SO | 8-SO | 3V @ 250µA | P-Channel | 9250 pF @ 25 V | 4.5V, 10V | 15mOhm @ 10.5A, 10V | MOSFET (Metal Oxide) | 110 nC @ 10 V | 10.5A (Ta) | -55°C ~ 150°C (TJ) | 40 V | Surface Mount | ±20V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Ta) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET P-CH 20V 5.3A 8SO | 8-SO | 2.5V @ 250µA | P-Channel | 860 pF @ 10 V | - | 60mOhm @ 5.3A, 10V | MOSFET (Metal Oxide) | 25 nC @ 10 V | 5.3A (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±12V | 8-SOIC (0.154", 3.90mm Width) | 2.5W (Tc) | - |
|
|
| Infineon Technologies
|
- |
-
| MOSFET P-CH 20V 780MA SOT23 | Micro3™/SOT-23 | 1.5V @ 250µA | P-Channel | 97 pF @ 15 V | 2.7V, 4.5V | 600mOhm @ 610mA, 4.5V | MOSFET (Metal Oxide) | 3.6 nC @ 4.45 V | 780mA (Ta) | -55°C ~ 150°C (TJ) | 20 V | Surface Mount | ±12V | TO-236-3, SC-59, SOT-23-3 | 540mW (Ta) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 25V 38A DIRECTFET | DIRECTFET™ MX | 2.35V @ 150µA | N-Channel | 6750 pF @ 13 V | 4.5V, 10V | 1.25mOhm @ 38A, 10V | MOSFET (Metal Oxide) | 69 nC @ 4.5 V | 38A (Ta), 200A (Tc) | -40°C ~ 150°C (TJ) | 25 V | Surface Mount | ±20V | DirectFET™ Isometric MX | 2.8W (Ta), 96W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 25V 34A DIRECTFET | DIRECTFET™ MX | 2.4V @ 100µA | N-Channel | 5340 pF @ 13 V | 4.5V, 10V | 1.6mOhm @ 34A, 10V | MOSFET (Metal Oxide) | 59 nC @ 4.5 V | 34A (Ta), 180A (Tc) | -40°C ~ 150°C (TJ) | 25 V | Surface Mount | ±20V | DirectFET™ Isometric MX | 2.8W (Ta), 78W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 40V 23A DIRECTFET | DIRECTFET™ MT | 2.25V @ 250µA | N-Channel | 5950 pF @ 15 V | 4.5V, 10V | 3.4mOhm @ 23A, 10V | MOSFET (Metal Oxide) | 63 nC @ 4.5 V | 23A (Ta), 150A (Tc) | -40°C ~ 150°C (TJ) | 40 V | Surface Mount | ±20V | DirectFET™ Isometric MT | 2.8W (Ta), 89W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET P-CH 30V 2.3A SOT23 | Micro3™/SOT-23 | 2.4V @ 10µA | P-Channel | 160 pF @ 25 V | 4.5V, 10V | 165mOhm @ 2.3A, 10V | MOSFET (Metal Oxide) | 2 nC @ 4.5 V | 2.3A (Ta) | -55°C ~ 150°C (TJ) | 30 V | Surface Mount | ±20V | TO-236-3, SC-59, SOT-23-3 | 1.25W (Ta) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
| MOSFET N-CH 200V 18A TO220AB | TO-220AB | 4V @ 250µA | N-Channel | 1300 pF @ 25 V | 10V | 180mOhm @ 11A, 10V | MOSFET (Metal Oxide) | 70 nC @ 10 V | 18A (Tc) | -55°C ~ 150°C (TJ) | 200 V | Through Hole | ±20V | TO-220-3 | 125W (Tc) | - |
|
|
| International Rectifier (Infineon Technologies)
|
- |
-
| MOSFET N-CH 55V 42A DPAK | D-Pak | 3V @ 250µA | N-Channel | 1570 pF @ 25 V | 4.5V, 10V | 13.5mOhm @ 36A, 10V | MOSFET (Metal Oxide) | 35 nC @ 5 V | 42A (Tc) | -55°C ~ 175°C (TJ) | 55 V | Surface Mount | ±16V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 110W (Tc) | - |
